发明名称 Plasma-activated layer deposition process by cathodic sputtering according to the magnetron principle for producing thin layers of metals and metal alloys comprises reducing the absolute value of the magnetic field strength
摘要 <p>Plasma-activated layer deposition process by cathodic sputtering according to the magnetron principle comprises reducing the absolute value of the magnetic field strength of a magnetron magnetic field to a value which reduces the discharge flow of the magnetron discharge by at least 20 %. An independent claim is also included for a device for plasma-activated layer deposition.</p>
申请公布号 DE10303428(A1) 申请公布日期 2004.08.05
申请号 DE2003103428 申请日期 2003.01.29
申请人 FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. 发明人 FIETZKE, FRED;GOEDICKE, KLAUS;WUENSCHE, TILO;KLOSTERMANN, HEIDRUN;LIEBIG, JOERN-STEFFEN
分类号 C23C14/35;(IPC1-7):C23C14/35 主分类号 C23C14/35
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