发明名称 |
Plasma-activated layer deposition process by cathodic sputtering according to the magnetron principle for producing thin layers of metals and metal alloys comprises reducing the absolute value of the magnetic field strength |
摘要 |
<p>Plasma-activated layer deposition process by cathodic sputtering according to the magnetron principle comprises reducing the absolute value of the magnetic field strength of a magnetron magnetic field to a value which reduces the discharge flow of the magnetron discharge by at least 20 %. An independent claim is also included for a device for plasma-activated layer deposition.</p> |
申请公布号 |
DE10303428(A1) |
申请公布日期 |
2004.08.05 |
申请号 |
DE2003103428 |
申请日期 |
2003.01.29 |
申请人 |
FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. |
发明人 |
FIETZKE, FRED;GOEDICKE, KLAUS;WUENSCHE, TILO;KLOSTERMANN, HEIDRUN;LIEBIG, JOERN-STEFFEN |
分类号 |
C23C14/35;(IPC1-7):C23C14/35 |
主分类号 |
C23C14/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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