| 摘要 |
In a provided semiconductor device, a plurality of seal rings (21-23) each made of a conductive material is formed along a periphery of the semiconductor chip (1) and as to surround the circuit formation portion (18), the seal ring (21-23) being connected with the semiconductor substrate and being buried in the plurality of wiring insulating films (8, 11, 13, 15, 16) in such a manner as to extend over the wiring insulating films (8, 11, 13, 15, 16), and one or more slit-like notches (21A-23A) are formed at specified positions in the plurality of seal rings (21-23) in such a manner that the respective slit-like notches (21A-23A) in two seal rings (21-23) being adjacent to each other are not aligned. <IMAGE> <IMAGE> |
