| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to reduce leakage current by forming an oxynitridation layer at a contact portion with a silicon epitaxial layer using RTN(Rapid Thermal Nitridation) under ammonia atmosphere. CONSTITUTION: An oxide layer with a desired thickness is formed on a substrate(21). By selectively etching the oxide layer using an isolation mask, an oxide pattern(22) is formed at a field region. The surface of the oxide pattern is changed to an oxynitridation layer(24) by RTN under ammonia atmosphere. A silicon epitaxial layer(23) is formed selectively on the exposed substrate.
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