| 摘要 |
A thin film photovoltaic device of the type comprising: an n-type, wide band gap, thin film window layer 703 of a semiconductor material; ```an n-type thin film semiconductor photon absorber layer 704 specifically deposited on said window layer to operate as an n-type layer, said photon absorber layer substantially comprising a compound from the set of compounds comprising: <SL> <LI>(i) Class II B element, of the Periodic Table of Elements, and Group VI element containing compounds; and <LI>(ii) Group III element and Group V element containing compounds; and </SL> ```a back metal contact 705; ```said device being characterised in that it further comprises: ```a thin protective layer 706 formed between said photon absorber layer and said back metal contact, said protective layer being of a type to protect said photon absorber layer from chemically reacting with said metal contact.
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