| 发明名称 |
Semiconductor device and method for fabricating the device |
| 摘要 |
A TFT 123 formed on a glass substrate 101 has a crystalline silicon film 108 that serves as an active region. The crystalline silicon film 108 is formed by forming an a-Si film 103 containing hydrogen on the glass substrate 101, thereafter adding nickel 104 to the surface of the a-Si film 103 and subjecting the a-Si film 103 to which the nickel 104 has been added to heat treatment. The crystal grain size of each crystal of the crystalline silicon film 108 is smaller than the size of the channel region of a TFT 123. With this arrangement, a high-performance semiconductor device that has stable characteristics with little characteristic variation and a high integration density and is simply fabricated with high yield can be provided.
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| 申请公布号 |
US6770515(B1) |
申请公布日期 |
2004.08.03 |
| 申请号 |
US20000660516 |
申请日期 |
2000.09.12 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
MAKITA NAOKI;MORIGUCHI MASAO |
| 分类号 |
H01L21/205;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/768;H01L29/786;(IPC1-7):H01L21/00;H01L21/04;H01L21/425;H01L27/01 |
主分类号 |
H01L21/205 |
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