| 摘要 |
The method for producing a shallow trench isolation for n- and p-channel field-effect transistors in a semiconductor module provides the following steps. A thermal oxide layer is applied in isolation trenches. A nitride liner is subsequently applied. In a further step, a mask is applied in the region in which n-channel field-effect transistors are intended to be produced. The nitride liner is removed around the mask. Finally, the mask is also removed. As a result, the properties of the n-channel field-effect transistors are improved, without impairing the properties of the p-channel field-effect transistors.
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