发明名称 |
Semiconductor memory with vertical selection transistor |
摘要 |
A semiconductor memory having memory cells, each memory cell includes a selection transistor and a trench capacitor. The selection transistor is formed in the form of a vertical transistor. In such a case, two word lines are separated only by a connecting channel that enables an electrically conductive connection between a trench filling of the trench capacitor and a bit line.
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申请公布号 |
US6770928(B2) |
申请公布日期 |
2004.08.03 |
申请号 |
US20030375763 |
申请日期 |
2003.02.26 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
SOMMER MICHAEL;ENDERS GERHARD |
分类号 |
H01L21/8242;H01L27/02;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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