| 发明名称 |
Method of making multiple work function gates by implanting metals with metallic alloying additives |
| 摘要 |
A method of forming a first and second transistors with differing work function gates by differing metals with a second metal selectively implanted or diffused into a first metal.
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| 申请公布号 |
US6770521(B2) |
申请公布日期 |
2004.08.03 |
| 申请号 |
US20020135725 |
申请日期 |
2002.04.29 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
VISOKAY MARK R.;ROTONDARO ANTONIO L. P.;COLOMBO LUIGI |
| 分类号 |
H01L21/8238;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8238 |
| 代理机构 |
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