Method for operating non-volatile memory with symmetrical dual-channels

摘要

A method for operating a non-volatile memory with symmetrical dual-channels. A programmed step is performed on the non-volatile memory to retain charges in both sides of an ONO layer so that the symmetrical dual-channels are generated and the one-bit writing step is completed. Afterwards, a selected voltage is simultaneously exerted on a first bit line and a third bit line to select a second bit line of the symmetrical dual-channels. Finally, a reading voltage is applied to the second bit line to acquire a reading current which is the sum of total current through the symmetrical dual-channels for increasing the reading speed of the non-volatile memory.