Semiconductor device composed of a group III-V nitride semiconductor

摘要

A semiconductor device has a first semiconductor layer composed of a group III-V nitride, an oxide film formed by oxidizing a second semiconductor layer composed of a group III-V nitride to be located on the gate electrode formation region of the first semiconductor layer, an insulating film formed on the oxide film to have a composition different from the composition of the oxide film, and a gate electrode formed on the insulating film.