发明名称 |
Selective filling of electrically conductive vias for three dimensional device structures |
摘要 |
Methods and apparatus for forming and/or enabling interconnection in a substrate. An example embodiment of a method comprises forming a via in the substrate. A preconditioning layer is deposited on the substrate. A catalyst layer is then bound to the preconditioning layer. A conductive material is deposited on the catalyst layer by electro-less deposition to fill the via with the conductive material. Deposition of the conductive material is selectively disabled from coating surfaces of the substrate outside the via. Advantageous alternatives are presented.
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申请公布号 |
US6770558(B2) |
申请公布日期 |
2004.08.03 |
申请号 |
US20030371466 |
申请日期 |
2003.02.21 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DELAMARCHE EMMANUEL;DESPONT MICHEL;DRECHSLER UTE;GEISSLER MATTHIAS |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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