Electrostatic discharge protection silicon controlled rectifier (ESD-SCR) for silicon germanium technologies

摘要

An electrostatic discharge (ESD) protection device having a silicon controlled rectifier (SCR) for protecting circuitry of an integrated circuit (IC). The SCR includes a N-doped layer disposed over a substrate and a first P doped region disposed over the N-doped layer. At least one first N+ doped region forming a cathode is disposed over the P-doped region and coupled to ground. The at least one first N+ doped region, first P-doped region, and N-doped layer form a vertical NPN transistor of the SCR. A second P doped region forming an anode is coupled to a protected pad. The second P doped region is disposed over the N-doped layer, and is laterally positioned and electrically isolated with respect to the first P doped region. The second P doped region, N-doped layer, and first P doped region form a lateral PNP transistor of the SCR.