Low-pressure CVD apparatus and method of manufacturing a thin film

摘要

An LPCVD apparatus comprising: a container for accommodating an organometallic compound which serves as a raw material; a heating means for heating the container and vaporizing the organometallic compound to obtain a raw material gas; a reactor for accommodating a substrate on which a thin film being precipitated; an exhaust pump for maintaining a low pressure atmosphere within the reactor; and a trap provided on the upstream side of the exhaust pump and cooling used raw material gas supplied from the reactor. In the reactor, the trap is provided with honeycomb-structure cylindrical fillers in a flowing passage through which the used raw material flows. The LPCVD apparatus according to the present invention enables recovery of a larger amount of used raw material without reducing its exhaust efficiency.