发明名称 CMOS reference circuit using field effect transistors in lieu of resistors and diodes
摘要 A CMOS reference circuit using field effect transistors (FETs) is described. A first plurality of FETs is coupled in series, source node to drain node. A second plurality of FETs is also coupled in series, source node to drain node. The first and second plurality of FETs are coupled such that a specified total voltage drop across the first plurality of FETs is realizable. The combination of the first and second plurality of FETs are usable as a replacement for a resistor. The circuit can also include a FET configured so that it is usable as a replacement for a diode.
申请公布号 US6771101(B1) 申请公布日期 2004.08.03
申请号 US20020226523 申请日期 2002.08.22
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 DOYLE JAMES T.
分类号 G05F3/30;(IPC1-7):H03L7/00 主分类号 G05F3/30
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