发明名称 |
CMOS reference circuit using field effect transistors in lieu of resistors and diodes |
摘要 |
A CMOS reference circuit using field effect transistors (FETs) is described. A first plurality of FETs is coupled in series, source node to drain node. A second plurality of FETs is also coupled in series, source node to drain node. The first and second plurality of FETs are coupled such that a specified total voltage drop across the first plurality of FETs is realizable. The combination of the first and second plurality of FETs are usable as a replacement for a resistor. The circuit can also include a FET configured so that it is usable as a replacement for a diode.
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申请公布号 |
US6771101(B1) |
申请公布日期 |
2004.08.03 |
申请号 |
US20020226523 |
申请日期 |
2002.08.22 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
DOYLE JAMES T. |
分类号 |
G05F3/30;(IPC1-7):H03L7/00 |
主分类号 |
G05F3/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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