发明名称 |
Trench schottky rectifier |
摘要 |
A Schottky rectifier is provided. The Schottky rectifier comprises: (a) a semiconductor region having first and second opposing faces, with the semiconductor region comprising a cathode region of first conductivity type adjacent the first face and a drift region of the first conductivity type adjacent the second face, and with the drift region having a lower net doping concentration than that of the cathode region; (b) one or more trenches extending from the second face into the semiconductor region and defining one or more mesas within the semiconductor region; (c) an insulating region adjacent the semiconductor region in lower portions of the trench; (d) and an anode electrode that is (i) adjacent to and forms a Schottky rectifying contact with the semiconductor at the second face, (ii) adjacent to and forms a Schottky rectifying contact with the semiconductor region within upper portions of the trench and (iii) adjacent to the insulating region within the lower portions of the trench.
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申请公布号 |
US6770548(B2) |
申请公布日期 |
2004.08.03 |
申请号 |
US20030429817 |
申请日期 |
2003.05.05 |
申请人 |
GENERAL SEMICONDUCTOR, INC. |
发明人 |
HSHIEH FWU-IUAN;SO KOON CHONG |
分类号 |
H01L21/329;H01L27/08;H01L27/095;H01L29/47;H01L29/872;(IPC1-7):H01L21/28;H01L21/44 |
主分类号 |
H01L21/329 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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