| 摘要 |
Methods are disclosed for simulating the profiles of pattern elements, as formed in a layer of developed resist on a lithographic substrate, wherein the simulated profiles of pattern elements closely correspond to actual lithographic results realized after lithographic exposure and development of the resist. The simulation is based on calculations of resist development that take into account a distribution of resist-development rate. The post-development profile of pattern elements as formed in the resist is estimated by focusing on the separation of resist molecules that occurs during resist development, wherein the simulation calculations are based on the assumption that, in each of multiple increments along the edges of pattern elements, each molecule of the resist material is separated from the layer of resist.
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