Semiconductor device with SI-GE layer-containing low resistance, tunable contact

摘要

The present invention provides a semiconductor device in which a low resistance, tunable contact is formed by means of using a SixGe1-x (0<x<1) layer. Thus, only moderate doping is required, which in turn protects the device from short channel effect and leakage. The low resistance, tunable contact is suitable for CMOS devices.