| 摘要 |
A method of forming a dielectric thin film pattern, comprises the steps of: depositing a dielectric thin film on a substrate having a resist pattern thereon by a vapor deposition method, wherein as a material for the dielectric thin film, at least one of CeO2, Sm2O3, Dy2O3, Y2O3 TiO2, Al2O3, and MgO is used; and removing the resist pattern whereby the dielectric thin film is patterned. A conductive film may additionally be provided on the dielectric film prior to the patterning step. <IMAGE>
|
