MAGNETIC MEMORY DEVICE, METHOD FOR MANUFACTURING MAGNETIC MEMORY DEVICE, AND INTEGRATED CIRCUIT DEVICE HAVING MAGNETIC MEMORY DEVICE, FOR MINIMIZING WRITE ERRORS

摘要

PURPOSE: A magnetic memory device, a method for manufacturing a magnetic memory device, and an integrated circuit device having magnetic memory devices are provided to minimize write errors by rejecting factors generating a variation in a coercive force and by improving a switching characteristic of bits in MRAM(Magnetic RAM). CONSTITUTION: A magnetic memory device includes a first interconnection, a second interconnection(12) intersecting three-dimensionally with the first interconnection, and a storage cell(13) positioned at an intersecting area of the first and second interconnections for writing/reading information of a magnetic spin. A sidewall portion(42S) of the second interconnection electrically coupled to the storage cell has a forward tapered shape having a contact angle relative to an upper surface of the storage cell being 45 degrees or more.