| 摘要 |
<p>A method for creating a source and a drain of a thin film transistor is disclosed. The method comprises the step (106) of forming a mask of a monolayer on a substrate. The mask will be used for selective electroless deposition of a metal layer (108). Thus, a metal layer could be grown in the areas where no monolayer is present. As a result, the grown metal layer could form a source and a drain with a gap in-between, where the monolayer has prevented deposition.</p> |
