| 摘要 |
PURPOSE: A field emission device and a manufacturing method thereof are provided to achieve improved effectiveness of electron emission by forming an electron injection layer beneath a tunnel oxide film. CONSTITUTION: A field emission device comprises a lower electrode formed on a substrate; an anode oxide film(25) formed on the lower electrode, excluding a certain part of the upper portion of the lower electrode; a tunnel oxide film formed on the certain part of the upper portion of the lower electrode; and an electron injection layer(31) formed on a certain part of the lower electrode beneath the tunnel oxide film. A method for manufacturing a field emission device, comprises a step of performing an etch-back and reoxidation process for repairing damages of the tunnel oxide film; and a step of forming an electron injection layer beneath the repaired tunnel oxide film by performing an anodic oxidation to a lower electrode.
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