SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a fabricating method thereof are provided to protect an insulating mask layer by forming a selective epitaxial silicon layer on an exposed surface of a self-aligned contact pad. CONSTITUTION: A semiconductor device includes a semiconductor substrate, a plurality of lines, a plurality of insulating layer spacers, a plurality of self-aligned contact pads, an interlayer dielectric, and a selective epitaxial silicon layer. The lines(55) are formed on the substrate(50). The lines include the first conductive layer and an insulating mask layer laminated on the first conductive layer. The insulating layer spacers(56) are formed on sidewalls of the lines. The self-aligned contact pads(62) are formed with the second conductive layer. The interlayer dielectric(64) includes a contact hole and is formed on the contact pads, the lines, and the substrate. The selective epitaxial silicon layer(68) is formed on the exposed surface of the self-aligned contact pads in order to cover the insulating mask layer.