| 摘要 |
PURPOSE: A method for fabricating a gallium nitride substrate is provided to reduce micro crack or bending occurring in a gallium nitride layer and fabricate a free standing gallium nitride substrate of a good quality by growing and separating a gallium nitride layer in a separate place like a growth chamber or a transfer chamber. CONSTITUTION: A gallium nitride buffer layer(41) is formed on a substrate(30) placed on a susceptor(36) in a growth chamber. Laser beam is irradiated to the lower direction of the susceptor to separate the gallium nitride buffer layer from the substrate. A gallium nitride layer is formed on the gallium nitride buffer layer separated from the substrate.
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