发明名称 |
METHOD OF WAFER MARKING FOR MULTI-LAYER METAL PROCESSES |
摘要 |
<p>A new method of forming a laser mark without damage to the wafer surface is described. A pad oxide layer is formed on a silicon wafer. A nitride layer is deposited overlying the pad oxide layer. A first trench is laser cut through the nitride layer and the pad oxide layer into the silicon wafer. The trench is etched to a second depth wherein the nitride layer is used as a hard mask and wherein the trench forms an identification mark.</p> |
申请公布号 |
SG105001(A1) |
申请公布日期 |
2004.07.30 |
申请号 |
SG20030001479 |
申请日期 |
2003.03.20 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
CHING THIAM CHUNG;KAY JIN LEE |
分类号 |
H01L21/311;H01L21/76;H01L23/544;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/311 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|