发明名称 SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD THEREOF, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, FOR PREVENTING ROUGHNESS OF POLISHING PAD DUE TO NOTCHES
摘要 <p>PURPOSE: A semiconductor substrate, a manufacturing method thereof, and a method for manufacturing a semiconductor device are provided to prevent a roughness of a polishing pad due to notches by adjusting curvature of both shoulder portions to be uniform. CONSTITUTION: A semiconductor substrate(12A,12B) has a notch(13A,13B) in an edge portion thereof. The notch has two shoulder portions, each of which is configured as an arc. A difference in curvature between the two shoulder portions is not less than 0 mm and not more than 0.1 mm. Each of the two shoulder portions has a curvature not less than 0.3 mm. The notch has a bottom portion configured as an arc and the bottom portion has a curvature not less than 1 mm.</p>
申请公布号 KR20040067983(A) 申请公布日期 2004.07.30
申请号 KR20040004060 申请日期 2004.01.20
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 HIDAKA YOSHIHARU;IKENOUCHI KATSUYUKI
分类号 H01L21/304;H01L21/306;H01L21/762;H01L23/544;(IPC1-7):H01L21/304 主分类号 H01L21/304
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