发明名称 |
SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD THEREOF, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, FOR PREVENTING ROUGHNESS OF POLISHING PAD DUE TO NOTCHES |
摘要 |
<p>PURPOSE: A semiconductor substrate, a manufacturing method thereof, and a method for manufacturing a semiconductor device are provided to prevent a roughness of a polishing pad due to notches by adjusting curvature of both shoulder portions to be uniform. CONSTITUTION: A semiconductor substrate(12A,12B) has a notch(13A,13B) in an edge portion thereof. The notch has two shoulder portions, each of which is configured as an arc. A difference in curvature between the two shoulder portions is not less than 0 mm and not more than 0.1 mm. Each of the two shoulder portions has a curvature not less than 0.3 mm. The notch has a bottom portion configured as an arc and the bottom portion has a curvature not less than 1 mm.</p> |
申请公布号 |
KR20040067983(A) |
申请公布日期 |
2004.07.30 |
申请号 |
KR20040004060 |
申请日期 |
2004.01.20 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HIDAKA YOSHIHARU;IKENOUCHI KATSUYUKI |
分类号 |
H01L21/304;H01L21/306;H01L21/762;H01L23/544;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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