| 摘要 |
PURPOSE: A method for manufacturing CMOS(Complementary Metal Oxide Semiconductor) image sensors is provided to enhance transmittance of an incident light and to reduce transmission of near-infrared rays by forming a antireflection film. CONSTITUTION: A CMOS image sensor includes a photodiode(1) and an MOS transistor(16) formed on a well deposited over a common substrate, an antireflection film formed on the photodiode, and an insulating layer deposited over the antireflection film and the MOS transistor. The antireflection film is formed by depositing a first insulating film(2,4) on a surface of the photodiode and on a surface of a gate electrode(8) constituting the MOS transistor, while depositing a second insulating film(3,5) on a surface of the first insulating film such that the second insulating film is thicker than the first insulating film and forming sidewalls at sides of the gate electrode by anisotropically etching the first insulating film and second insulating film.
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