| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to increase the possibility of removing a residual material in a subsequent gate interconnection process by forming a moat of a U type. CONSTITUTION: A trench(9) is formed in a semiconductor substrate having a pad. The surface of the substrate including the trench is oxidized. A liner nitride layer is formed on the inner surface of the trench. The liner nitride layer is selectively eliminated to make the liner nitride layer remain on the sidewall of the trench. An oxide layer is formed on the substrate including the trench. The trench is filled with an HDP(high density plasma) oxide layer. The HDP oxide layer is polished. The pad is eliminated.
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