| 摘要 |
PURPOSE: A method for forming a storage node contact plug of a semiconductor device is provided to restrain a conductive defect due to exposure of tungsten by performing a photoresist barrier storage node contact plug CMP process using a storage node contact blanket mask. CONSTITUTION: A gate is formed on a semiconductor substrate including a net die region and a dummy die region. A gate spacer is formed on a lateral part of the gate. The first interlayer oxide layer is formed on the entire surface of the semiconductor substrate. The semiconductor substrate between the gate spacers is exposed by removing selectively the first interlayer oxide layer. A bit line contact plug(33a) for connecting bit lines and a storage node contact plug(33b) for connecting storage nodes are formed on the exposed semiconductor substrate. A bit line(35) is formed on the bit line contact plug. The second interlayer oxide layer(41) is formed on the entire surface of the semiconductor substrate. A storage node contact hole is formed by removing selectively the second interlayer oxide layer. A storage node spacer(45) is formed on a lateral part of the storage node contact hole. A polysilicon layer for the storage node is formed on the second interlayer oxide layer. A photoresist pattern is formed on the polysilicon layer of the dummy die region. The polysilicon layer is removed from the second interlayer oxide layer of the net die region. A storage node contact plug(47b,47c) is formed on the net die region and the dummy die region by removing selectively the residual polysilicon layer pattern of the net die region and the polysilicon layer of the dummy die region.
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