METHOD FOR IMPROVING DOUBLE HUMP EFFECT OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FABRICATED THEREBY

摘要

PURPOSE: A semiconductor device with an improved double hump effect is provided to improve a dual hump phenomenon caused by a recess of a field oxide layer in an STI(shallow trench isolation) process by making the edge of a gate formed on an active region while using an electrical isolation. CONSTITUTION: A silicon substrate is prepared which is divided into an active region and a field oxide layer region. A gate(39) is formed on the active region of the silicon substrate wherein both sides of the gate is positioned inward by a predetermined interval. A source region(41a) and a drain region(41b) are formed in the active region under both sides of the gate.