VERTICAL HIGH VOLTAGE MOS TRANSISTOR

摘要

PURPOSE: A vertical high voltage MOS(metal oxide semiconductor) transistor is provided to reduce on-resistance of a vertical high voltage MOS device by increasing the density of a drift region with respect to the same breakdown voltage. CONSTITUTION: A channel region is made of a body region of the first conductivity type that is formed in the lower part of an impurity region(8) of the second conductivity type formed under a gate(10). A drift region in which a pillar region(12) of the first conductivity type and a pillar region(20) of the second conductivity type are alternatively formed in a direction perpendicular to a channel longitudinal direction is formed under the channel region.