| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for preventing a polysilicon gate electrode from penetrating by a channeling ion on ion implantation, in a manufacturing method for a field-effect transistor having the gate electrode using a polysilicon layer. SOLUTION: The manufacturing method for a semiconductor device comprises an ion implanting process to the polysilicon layer for a polysilicon gate electrode 41, an ion implanting process for an LDD region 11 to a silicon substrate 1, and an ion implanting process for a source-drain region 12 to the silicon substrate 1 under a condition that the ratio (t/Rp) of the thickness (t) of the polisilicon layer to a projection flight (Rp) that indicates a peak position of impurity concentration in an LSS theory is 10 or above. COPYRIGHT: (C)2004,JPO&NCIPI
|
