MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To provide a package by which a chip can be thinned remarkably without a back grinding treatment resulting in a crack and a grinding trace, the chip can be manufactured at a lower cost in a higher throughput and the dispersion of the thickness of the chip can be inhibited; and to provide its manufacturing method. SOLUTION: A semiconductor film as a thin-film having a film thickness of≤500 nm formed on a substrate functioning as a supporter is crystallized by a laser beam in continuous oscillation, and the chip with a semiconductor element as the thin-film of the total film thickness of 5μm, more desirably≤2μm is formed by using the crystallized semiconductor film. The chip is mounted on an interposer under the state in which the substrate is peeled finally. COPYRIGHT: (C)2004,JPO&NCIPI