| 摘要 |
PROBLEM TO BE SOLVED: To provide a reaction container for a thin film deposition which can effectively deposit the thin film, whose high purity, an excellent electric characteristic, and a step coverage are realized, on a wafer by using a plurality of reactive gases. SOLUTION: A distributing block 52 distributes a first reactive gas into a plurality of the first reactive gas flows equally, and the first reactive gas flows are supplied to a shower block 60 through a plurality of first transferring tubes 53 located symmetrically. Between the upper diffusion block 70 and middle diffusion block 80 of the shower block, the first reactive gas flows from a plurality of first and second main flow paths, which are formed radially and symmetrically, and from a plurality of first and second subflow paths associated with the main flow path diverged at a right angle, and they are uniformly jetted from a plurality of first jet holes 93. COPYRIGHT: (C)2004,JPO&NCIPI
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