| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory which can improve device reliability by suppressing fluctuation of a threshold voltage due to capacitance coupling by reducing capacitance across-floating electrodes. SOLUTION: The nonvolatile semiconductor memory which can be written and erased electrically comprises a silicon substrate 1, a plurality of element isolating parts 101 which are arranged to protrude from the silicon substrate 1 at a predetermined interval, floating electrodes 102 arranged between the element isolating parts 101, and a control electrode 104 laminated on the element isolating parts 101 and floating electrodes 102. The mutual interval between adjoining floating electrodes 102 is formed so as to be broader on the side away from the silicon substrate 1 than on the silicon substrate 1 side. COPYRIGHT: (C)2004,JPO&NCIPI
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