发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing apparatus in which the surface temperature of each substrate can be measured continuously in an atmosphere (Ar, N2, H2) identical or close to that of actual processing of a substrate regardless of the length of the housing of a temperature measuring means. SOLUTION: The substrate processing apparatus comprises a gas diffusion chamber 23 of a gas ejecting means 2 formed of an annular protrusion 21 projecting inward from the ceiling part of a chamber 11 and a shower plate 22 fixed to the forward end part thereof. The gas diffusion chamber 23 is located at such a height as a temperature measuring means 4 having a temperature measuring part of thermocouple wires buried in the forward end part of a housing having a specified length can be contained therein. The temperature measuring means is held by at least one through hole provided at a specified position of the shower plate. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004214313(A) 申请公布日期 2004.07.29
申请号 JP20020380146 申请日期 2002.12.27
申请人 ULVAC JAPAN LTD 发明人 WATABE MIKIO;IRINO OSAMU;KANEDA TETSUYA;KIMURA TOSHIHARU
分类号 C23C16/52;H01L21/205;(IPC1-7):H01L21/205 主分类号 C23C16/52
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