| 摘要 |
PROBLEM TO BE SOLVED: To provide a material for an insulating film consisting of an organic silane compound suitable for a layer insulation material for a semiconductor device and formed by chemical vapor deposition, and to provide an insulating film formed from the material and a semiconductor device using the insulating film. SOLUTION: The material for the insulating film is made by the chemical vapor deposition containing the organic silane compound shown by a formula (1), especially by plasma excitation chemical vapor deposition. R<SP>1</SP>and R<SP>2</SP>are 1-20 C hydrocarbon groups, R<SP>3</SP>and R<SP>4</SP>are hydrogen atom or a 1-20 C hydrocarbon group, R<SP>1</SP>and R<SP>1</SP>, or R<SP>2</SP>and R<SP>4</SP>may be bonded to each other to form a ring structure, and m and n are 0 or 1 respectively. COPYRIGHT: (C)2004,JPO&NCIPI
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