发明名称 |
Methods of forming semiconductor devices including mesa structures and multiple passivation layers and related devices |
摘要 |
A method of forming a semiconductor device may include forming a semiconductor structure on a substrate wherein the semiconductor structure defines a mesa having a mesa surface opposite the substrate and mesa sidewalls between the mesa surface and the substrate. A first passivation layer can be formed on at least portions of the mesa sidewalls and on the substrate adjacent the mesa sidewalls wherein at least a portion of the mesa surface is free of the first passivation layer and wherein the first passivation layer comprises a first material. A second passivation layer can be formed on the first passivation layer wherein at least a portion of the mesa surface is free of the second passivation layer, and wherein the second passivation layer comprises a second material different than the first material. Related devices are also discussed.
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申请公布号 |
US2004147054(A1) |
申请公布日期 |
2004.07.29 |
申请号 |
US20030741240 |
申请日期 |
2003.12.19 |
申请人 |
HABERERN KEVIN WARD;ROSADO RAYMOND;BERGMAN MICHAEL JOHN;EMERSON DAVID TODD |
发明人 |
HABERERN KEVIN WARD;ROSADO RAYMOND;BERGMAN MICHAEL JOHN;EMERSON DAVID TODD |
分类号 |
C30B1/00;H01L21/00;H01L33/14;H01S5/042;H01S5/22;H01S5/223;H01S5/227;H01S5/323;(IPC1-7):H01L21/00 |
主分类号 |
C30B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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