Fabrication method for surface emitting semiconductor device and surface emitting semiconductor device

摘要

A method or fabricating a surface emitting semiconductor device like a GaAs-based vertical cavity surface emitting laser diode comprising basically a substrate, two stacks of Bragg mirrors surrounding a laser cavity containing the active region and a contact layer on top of the DBR facing the light extraction window 13 featuring a layer (2) made form gallium-indium-phosphide (GaInP) epitaxially deposited during the growth of the layer sequence.