发明名称 |
AN ENHANCEMENT MODE METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHOD FOR FORMING THE SAME |
摘要 |
An implant-free enhancement mode metal-oxide semiconductor field effect transistor (EMOSFET) is provided. The EMOSFET has a III-V compound semiconductor substrate and an epitaxial layer structure overlying the III-V compound semiconductor substrate. The epitaxial material layer has a channel layer and at least one doped layer. A gate oxide layer overlies the epitaxial layer structure. The EMOSFET further includes a metal gate electrode overlying the gate oxide layer and source and drain ohmic contacts overlying the epitaxial layer structure. |
申请公布号 |
WO2004064172(A2) |
申请公布日期 |
2004.07.29 |
申请号 |
WO2003US40680 |
申请日期 |
2003.12.18 |
申请人 |
MOTOROLA, INC. |
发明人 |
PASSLACK, MATTHIAS;HARTIN, OLIN, L.;RAY, MARCUS;MEDENDORP, NICHOLAS |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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