Process and device to crystallize amorphous semiconductor especially amorphous silicon layers uses at least two successive melting radiation pulses separated by one microsecond

摘要

A process for crystallizing amorphous semiconductor layers in at least a linear region of a semiconductor layer by melting with pulsed radiation comprises using at least two successive pulses having a time separation between their intensity maxima of one microsecond or less. An Independent claim is also included for a device for the above process.