发明名称 METHOD OF SYNTHESIS OF 3D SILICON COLLOIDAL PHOTONIC CRYSTALS BY MICROMOLDING IN INVERSE SILICA OPAL (MISO)
摘要 A new type of synthetic silicon colloidal photonic colloidal crystal is described presenting a different topology than previously synthesised high refractive index contrast colloidal photonic crystals. It has been built usi ng a new synthesis process based upon micromolding in inverse silica opals (MISO), where the micromold has a structure of interconnected air cavities i n a silica matrix. By chemical vapour deposition of disilane within this micromold, a continuous and uniform silicon layer of controlled thickness is formed, which coats the walls of the silica matrix. Later, by dissolution of the starting silica micromold it is possible to oA new type of synthetic silicon colloidal photonic colloidal crystal is described presenting a different topology than previously synthesised high refractive index contras t colloidal photonic crystals. It has been built using a new synthesis process based upon micromolding in inverse silica opals (MISO), where the micromold has a structure of interconnected air cavities in a silica matrix. By chemic al vapour deposition of disilane within this micromold, a continuous and unifor m silicon layer of controlled thickness is formed, which coats the walls of th e silica matrix. Later, by dissolution of the starting silica micromold it is possible to obtain a face centered cubic silicon colloidal photonic crystal with a topology never observed before and which presents a full photonic ban d gap, as indicated by theoretical photonic band structure calculations making them useful as optical components of envisioned all-optical microphotonic crystal devices, circuits, chips and computers.
申请公布号 CA2507109(A1) 申请公布日期 2004.07.29
申请号 CA20042507109 申请日期 2004.01.09
申请人 THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTO 发明人 TETREAULT, NICOLAS;MIGUEZ, HERNAN;OZIN, GEOFFREY ALAN;YANG, SAN MING
分类号 C30B5/00;C30B33/00;G02B6/122;(IPC1-7):C30B29/60;G02B6/12 主分类号 C30B5/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利