发明名称 ABNORMALITY DETECTION METHOD FOR VOLTAGE-DRIVEN SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To quickly detect abnormalities of a plurality of voltage-driven semiconductor elements connected in series or in parallel by magnetically coupling gate wires to each other for balancing gate timing, immediately after the occurrence of the element abnormality irrespective of operation modes of the semiconductor elements. SOLUTION: Voltages V(Tg1), V(Tg2) at a part where the gate wires of two pieces, for example, of the elements Q1, Q2 connected in series are magnetically coupled by a magnetic coupling circuit Tg are taken in a control circuit CT via an E/O circuit. The abnormality can be detected by specifying the correspondent element immediately when the element abnormality occurs from a relation between the voltages and gate signals given to gate drive circuits GDU 1, 2. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004215416(A) 申请公布日期 2004.07.29
申请号 JP20030000416 申请日期 2003.01.06
申请人 FUJI ELECTRIC HOLDINGS CO LTD 发明人 ABE YASUSHI;ISHIYAMA HIROSHI
分类号 H02M1/00;H02M1/08;(IPC1-7):H02M1/00 主分类号 H02M1/00
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