METHOD OF MANUFACTURING MIS COMPOUND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To realize a MIS compound semiconductor device that uses an InP-based compound semiconductor and have good characteristics by making a gate insulating film having excellent MIS interface characteristics to be formed in a short time at a low process temperature. SOLUTION: The MIS compound semiconductor device is manufactured by forming an AlN film (gate insulating film) 103 composed of a nitride of a group III element on a substrate 101 provided with an epitaxial layer (semiconductor layer) 102 composed of an InP-based compound semiconductor by the ECR sputtering method. COPYRIGHT: (C)2004,JPO&NCIPI