| 摘要 |
This invention relates to a method for making the gate dielectric layer, more particularly, to the method for making the interface between the gate dielectric layer and silicon substrate by using oxygen radicals and hydroxyl radicals. In the method, we send the wafers, which has passed through the cleaning process for the silicon substrate, to the chamber at first and then transmit the first reaction gas, which comprises the nitric monoxide and the oxygen or comprises the nitric monoxide and nitrogen, to the chamber to form a silicon nitride layer or a silicon oxynitride layer on the first surface of the silicon substrate to be a gate. Next, we transmit the second reaction gas, which comprises the oxygen and the hydrogen, to the chamber and make the second reaction gas to be dissociated into the oxygen radicals and the hydroxyl radicals. The oxygen radicals enter to the contacting surface between the silicon substrate and the silicon oxynitride layer by diffusing ways and pass through the post anneal process to form an interface on the contacting surface between the gate dielectric layer and the silicon substrate to produce the smaller volume of the semiconductor devices.
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