发明名称 REDUCTION OF THE CONTACT RESISTANCE IN ORGANIC FIELD EFFECT TRANSISTORS COMPRISING PALLADIUM CONTACTS BY THE USE OF PHOSPHINES AND PHOSPHINES CONTAINING METAL
摘要 The invention relates to a semiconductor device comprising a semiconductor section consisting of an organic semiconductor material, a first contact for injecting charge carriers into the semiconductor section and a second contact for extracting charge carriers from the semiconductor section. A phosphine layer is located between the first contact and the semiconductor section and/or between the second contact and the semiconductor section. The phosphine acts as a charge transfer molecule, which facilitates the transfer of charge carriers between the contact and the organic semiconductor material. This enables the contact resistance between the contact and the organic material to be significantly reduced.
申请公布号 WO2004017440(A3) 申请公布日期 2004.07.29
申请号 WO2003DE02379 申请日期 2003.07.15
申请人 INFINEON TECHNOLOGIES AG;KLAUK, HAGEN;SCHMID, GUENTER;ZSCHIESCHANG, UTE;HALIK, MARCUS;TERZOGLU, EFSTRATIOS 发明人 KLAUK, HAGEN;SCHMID, GUENTER;ZSCHIESCHANG, UTE;HALIK, MARCUS;TERZOGLU, EFSTRATIOS
分类号 H01L51/00;H01L51/05;H01L51/30;H01L51/40 主分类号 H01L51/00
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