| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the linewidth of a photoresist pattern without generating the change of the photoresist pattern, reduction of the thickness of the resist and a slimming phenomenon. <P>SOLUTION: In an overcoating composition for photoresist and a photoresist pattern forming method, the overcoat composition for photoresist containing an acid is applied over the entire surface of a photoresist pattern formed in a general lithographic process, the acid is diffused into the interior of the photoresist pattern, and then the photoresist at the part where the acid has diffused is developed and removed by using an alkali solution. By virtue of this method, the linewidth of a positive photoresist pattern can be reduced, and the slimming phenomenon of the line width of a negative photoresist pattern can be prevented in the subsequent linewidth measuring step utilizing a SEM. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
