| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To form a contact of a semiconductor device having a copper wiring by using a dual damascene process, control a scratch onto a wafer surface, a break and pick to an insulating layer, copper diffusion onto a substrate, etc., and reduce the contact resistance between a tungsten plug and the copper wiring. <P>SOLUTION: A PMD layer 202 provided on a substrate 200 is etched to form a contact hole part and a dual damascene pattern having a trench part that is wider than the contact hole part. A tungsten diffusion protection film 204 is provided on a sidewall, a tungsten layer satisfying a damascene pattern is formed, layers above the trench part are polished by a tungsten CMP, an upper part of the layers in the trench part is etched, a tungsten plug 207 that extends over to a lower part of the trench part and the contact hole part is formed, a copper diffusion protection film 205 is provided on the tungsten plug, and a copper wiring 209 is provided on the copper diffusion protection film. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
