| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a halftone phase shift mask which need not form a superfine pattern, suppresses a sub peak of light intensity exerting adverse influence on image formation at the time of exposure and has a light shielding pattern of lowered transmissivity in an outside region of an element region where multiple exposure is applied and to provide a manufacturing method of the halftone phase shift mask. <P>SOLUTION: In the halftone phase shift mask having a halftone phase shift film 102 composed of a single layer or two or more layers on a transparent substrate 101, in the outside region 107 of the element region on the transparent substrate 101 where multiple exposure is applied, transmissivity to exposure light at the region is lowered by changing composition of the halftone phase shift film 102 by an irradiation method with electromagnetic waves, particle beams, heat rays or the like and a method for exposing the whole to an active atmosphere after masking a region composition of which is not wanted to be changed. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
