发明名称 NONVOLATILE SEMICONDUCTOR MEMORY, AND WRITING/ERASING CONTROL SEQUENCE FOR NONVOLATILE SEMICONDUCTOR MEMORY
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory capable of efficiently verifying a sequence. <P>SOLUTION: The nonvolatile semiconductor memory 1 is provided with a memory array 26 in which a plurality of memory cells 30, 32 are 2-dimensionally arranged, a storage part 3 for storing the sequence of controlling the writing and erasing of the memory cells, and a writing and erasing control part 2 for reading the sequence from the storage part to control the writing and erasing of the memory cells. The sequence includes a plurality of subsequences, and each subsequence includes the voltage resetting step of resetting a voltage, and the path resetting step of resetting a selected path. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p>
申请公布号 JP2004213723(A) 申请公布日期 2004.07.29
申请号 JP20020379260 申请日期 2002.12.27
申请人 RENESAS TECHNOLOGY CORP 发明人 MITANI HIDENORI
分类号 G11C16/02;G11C16/34;(IPC1-7):G11C16/02 主分类号 G11C16/02
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