| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique to make an interval between neighboring two pixel electrodes shorter than the limiting value determined with a conventional margin of fabrication and to prevent the neighboring two pixel electrodes from short circuitting between each other. SOLUTION: In the method for fabricating a semiconductor device, first and second TFTs 11, 12 are formed on a substrate 10, an interlayer insulating film 13 is formed on the upper side of the TFTs, resist masks 14 to cover spacing between the neighboring two pixel electrode forming regions are formed on the interlayer insulating film, protruding parts 13b located between the neighboring two pixel electrode forming regions and provided with surfaces with curvature or inclined surfaces are formed on the interlayer insulating film by wet etching of the interlayer insulating film using the resist masks 14 as the masks, a conductive film 15 is formed on the interlayer insulating film, parts of the conductive film in the proximity of upper parts of the protruding parts are polished and removed with CMP (chemical mechanical polishing), the pixel electrodes 15a, 15b composed of the conductive film are formed on the interlayer insulating film and the neighboring pixel electrodes are insulated and separated with the protruding parts. COPYRIGHT: (C)2004,JPO&NCIPI |
